3M™ Trizact™ CMP Pad
3M Stock
B40045199
3M CMP Padsfor Semiconductor
Superior CMP Pads for superior processes
Refine semiconductor manufacturing processes with
high-performing and efficient 3M™ Trizact™ CMP Pads
Minimise defects, maximise yields with 3M™ CMP Pads
Looking for a cost-effective solution for your chemical mechanical planarisation (CMP) processes?
The need to continually increase yield leaves no room for variation in a fab's production that risks waste or device reliability. Rather than choosing between higher planarisation efficiency and better defect performance, choose both. Instead of a diamond pad conditioner, redefine your planarisation process with 3M™ Trizact™ CMP Pads.
3 reasons to choose 3M™ Trizact™ CMP Pads
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1. Advanced performance for your advanced nodes
At the heart of each 3M™ Trizact™ CMP Pad is microreplication — a core 3M technology platform that allows us to precisely sculpt durable, microscopic 3D features onto the pad surface.
This highly controlled and tunable process arranges asperities and pores into independent unit cells to enable uniform polishing and pressure across the wafer, ideal for advanced nodes. After more than 1000 wafer runs, 3M microreplicated pads maintained their dimensional integrity — showing more than 15X less wear than a conventional pad [1, p. 6].
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2. Increased polishing uniformity
Microreplicated CMP pads from 3M demonstrated very consistent wafer-to-wafer stability, repeatability and uniformity over at least 2000 wafer passes, as measured by lower levels of within-die nonuniformity (WIDNU), than conventional pads [1, p. 5]. In testing, 3M™ Trizact™ CMP Pads had more than 30% reduced gate height WIDNU and more than 40% reduced top-of-gate dielectric thickness WIDNU
Source: [1] A Microreplicated Pad for Tungsten Chemical-Mechanical Planarization
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3. Faster, more precise planarisation
3M™ Trizact™ CMP Pads planarise quickly, precisely and evenly. Where a conventional pad might need to deposit a thick, inefficient oxide layer of more than 2000 angstrom (Å) over a silicon nitride layer to allow leeway for imprecise planarisation, 3M CMP pads need only 65% that amount. This saves on both oxide deposition and the slurry used for the CMP process. Plus, less material to remove means less time spent polishing. Testing demonstrated a more than 50% reduction in the time needed to remove an oxide layer compared to a conventional diamond grit pad.
Let's work together to optimise your CMP processes
Contact us with your latest process challenges and receive direct support from a dedicated team of technical experts. Then enjoy local sampling and product iterations thanks to global laboratory and manufacturing capabilities.
This information is based on tests performed at 3M laboratory facilities, and may be based on a limited sample size or a subset of 3M CMP materials. Many factors beyond 3M’s control and uniquely within the user’s control can affect the use and performance of 3M CMP materials in a particular semiconductor manufacturing application. To learn more about the specific properties and benefits of a given 3M CMP pad or 3M CMP pad conditioner, or to arrange a technical evaluation of the product, visit the 3M product catalog or contact 3M to speak with an expert.
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